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| SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 FEBRUARY 1996 FEATURES * High VCEO 350V * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAIL BSP16 BSP19 C BSP19 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 400 350 5 1 0.5 2 -55 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 400 350 5 20 0.1 0.5 1.3 40 50 70 10 MHz pF TYP. MAX. UNIT CONDITIONS. IC=100A IC=10mA* IE=100A VCB=300V VEB=3V IC=50mA, IB=4mA* IC=50mA, IB=4mA* IC=20mA, VCE=5V* IC=100mA, VCE=5V* IC=10mA, VCE=10V f = 20MHz VCB=20V, f=1MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V V V nA A Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device For typical characteristics graphs see FZT658 datasheet. 3 - 60 |
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